High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector

• 来源期刊: 中国物理B（英文版）
• 关键词: infrared detector InAs/GaSb superlattice dual-color molecular beam epitaxy
• 年，卷（期）: 2019,（3）
• 页码范围: 382-386
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/3/038504

摘要

A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice.The saturated responsivity was achieved under low bias voltage for both channels.The device could be operated as a single detector for sequential detection and showed high quantum efficiencies.The peak quantum efficiencies of long-wavelength infrared band-1 (blue channel) and long-wavelength infrared band-2 (red channel) were 44％ at 6.3 μm under 20 mV and 57％ at 9.1 μm under-60 mV,respectively.The optical performance for each channel was achieved using a 2 μm thickness absorber.Due to the high QE,the specific detectivities of the blue and red channels reached 5.0 × 101 1 cm.Hz 1/2/W at 6.8 μm and 3.1 × 1011 cm.Hz 1/2/W at 9.1 μm,respectively,at 77 K.