Modeling electric field of power metal-oxide-semiconductor field-effect transistor with dielectric trench based on Schwarz–Christoffel transformation

• 来源期刊: 中国物理B（英文版）
• 关键词: conformal mapping Schwarz–Christoffel transformation electric field trench metal-oxide-semiconductor field-effect transistor (MOSFET) breakdown voltage
• 年，卷（期）: 2019,（5）
• 页码范围: 426-434
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/28/5/058503

摘要

A power metal-oxide-semiconductor field-effect transistor (MOSFET) with dielectric trench is investigated to en-hance the reversed blocking capability. The dielectric trench with a low permittivity to reduce the electric field at reversed blocking state has been studied. To analyze the electric field, the drift region is segmented into four regions, where the conformal mapping method based on Schwarz–Christoffel transformation has been applied. According to the analysis, the improvement in the electric field for using the low permittivity trench is mainly due to the two electric field peaks generated in the drift region around this dielectric trench. The analytical results of the electric field and the potential models are in good agreement with the simulation results.