Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal-Organic Chemical Vapor Deposition

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2020,（6）
• 页码范围: 115-118
• 页数: 4页
• 语种: 英文
• DOI: 10.1088/0256-307X/37/6/068501

摘要

Mid-wavelength infrared planar photodiodes were demonstrated,in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal organic chemical vapor deposition reactors.The formation of a planar homo junction was confirmed by secondary ion mass spectroscopy and its I-V characteristics.A cut-off wavelength around 5 μm was determined in 77K optical characterization,and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640 μm diameter.These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction,and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.