Diffusion Coefficient at Resonance Frequency as Applied to n+/p/p+ Silicon Solar Cell Optimum Base Thickness Determination

• 作者: Amadou Mamour Ba Amadou Mar Ndiaye Gora Diop Gregoire Sissoko Ibrahima Diatta Lemrabott Habiboullah Mamadou Lamine Ba Mame Faty Mbaye Fall Sega Gueye
• 来源期刊: 电磁分析与应用期刊(英文)
• 学科: 工学
• 关键词: Silicon Solar Cell Resonance Frequency Magnetic Field Recombination Velocity Base Thickness
• 年，卷（期）: 2020,（10）
• 页码范围: 145-158
• 页数: 14页
• 分类号: TG1

摘要

The modelling and determination of the geometric parameters of a solar cell are important data, which influence the evaluation of its performance under specific operating conditions, as well as its industrial development for a low cost. In this work, an n+/p/p+ crystalline silicon solar cell is studied under monochromatic illumination in modulation and placed in a constant magnetic field. The minority carriers’ diffusion coefficient (<em>D</em>(<em>ω</em>, <em>B</em>), in the (<em>p</em>) base leads to maximum values (Dmax) at resonance frequencies (<em>ωr</em>). These values are used in expressions of AC minority carriers recombination velocity (Sb(Dmax, H)) in the rear of the base, to extract the optimum thickness while solar cell is subjected to these specific conditions. Optimum thickness modelling relationships, depending respectively on Dmax, <em>ωr</em> and <em>B</em>, are then established, and will be data for industrial development of low-cost solar cells for specific use.