120 GHz on-chip multi-mode wideband dielectric resonator antennas for THz applications

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2020,（3）
• 页码范围: 166-170
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11801-020-9081-6

摘要

This work discusses the design methods of 120 GHz on-chip dual-mode and three-mode dielectric resonator antennas (DRAs) based on a standard CMOS technology.The bandwidths of the DRAs are expanded by merging adjacent modes with similar radiation patterns.The impedance bandwidth of 18.6％ with the peak gain of 6 dBi is achieved for the proposed on-chip dual-mode DRA.In addition,the impedance bandwidth of 20.1％ with the peak gain of 6.9 dBi is achieved for the proposed three-mode DRA.To the best of authors' knowledge,the on-chip multi-mode DRAs are first proposed.The impedance bandwidth of the proposed three-mode on-chip DRA is wider than the other on-chip DRAs using planar feeding with on-chip ground.The proposed antennas are promising for terahertz applications due to the merits of wide band,high gain and high radiation efficiency.