Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current

• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2020,（2）
• 页码范围: 103-107
• 页数: 5页
• 语种: 英文
• DOI: 10.1007/s11801-020-9087-0

摘要

Using the rate equation,several optical methods of characterizing the threshold of a laser diode (LD) were analyzed.The thresholds determined by all methods are consistent if the spontaneous-emission-coefficient (β) is small.If β＞0.05,the thresholds obtained by different methods are different.Especially,for micro-nano LDs with a large fl,these methods are starting to become inaccurate.However,the d2S/dl2-I is a relatively accurate method to characterize threshold of these LDs compared to other methods.The effects of the spontaneous-emission-lifetime (τsp) and the photon-lifetime (τp) on thresholds were analyzed.The exact functions between the threshold and the β,τsp and τp were obtained.