Directed self-assembly of block copolymers for sub-10 nm fabrication

• 来源期刊: 极端制造(英文)
• 年，卷（期）: 2020,（3）
• 所属期刊栏目: TOPICAL REVIEWS
• 页码范围: 124-158
• 页数: 35页
• 语种: 中文

摘要

Directed self-assembly (DSA) emerges as one of the most promising new patterning techniques for single digit miniaturization and next generation lithography. DSA achieves high-resolution patterning by molecular assembly that circumvents the diffraction limit of conventionalphotolithography. Recently, the International Roadmap for Devices and Systems listed DSA as one of the advanced lithography techniques for the fabrication of 3-5 nm technology node devices. DSA can be combined with other lithography techniques, such as extreme ultra violet (EUV) and 193 nm immersion (193i), to further enhance the patterning resolution and the device density. So far, DSA has demonstrated its superior ability for the fabrication of nanoscale devices, such as fin field effect transistor and bit pattern media, offering a variety of configurations for high-density integration and low-cost manufacturing. Over 1 T in-2 device density can be achieved either by direct templating or coupled with nanoimprinting to improve the throughput. The development of highχblock copolymer further enhances the patterning resolution of DSA. In addition to its superiority in high-resolution patterning, the implementation of DSA on a 300 mm pivot line fully demonstrates its potential for large-scale, high-throughput, and cost-effective manufacturing in industrial environment.