Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

• 作者: El Hadj Sow Gregoire Sissoko Ibrahima Diatta Mamadou Lamine Ba Mamadou Wade Mamour Amadou Ba Masse Samba Diop Meimouna Mint Sidi Dede Mor Ndiaye Sega Gueye
• 来源期刊: 能源与动力工程(英文)
• 学科: 数学
• 关键词: Silicon Solar Cell Absorption Coefficient Back Surface Recombination Optimum Thickness
• 年，卷（期）: 2020,（7）
• 页码范围: 445-458
• 页数: 14页
• 分类号: O17

摘要

The monochromatic absorption coefficient of silicon, inducing the light penetration depth into the base of the solar cell, is used to determine the optimum thickness necessary for the production of a large photocurrent. The absorption-generation-diffusion and recombination (bulk and surface) phenomena are taken into account in the excess minority carrier continuity equation. The solution of this equation gives the photocurrent according to ab</span><span style="font-family:Verdana;">sorption and electronic parameters. Then from the obtained short circuit</span><span style="font-family:Verdana;"> photocurrent expression, excess minority carrier back surface recombination velocity is determined, function of the monochromatic absorption coefficient at a given wavelength. This latter plotted versus base thickness yields the optimum thickness of an n</span>^{<span style="font-family:Verdana;">+</span>}<span style="font-family:Verdana;">-p-p</span>^{<span style="font-family:Verdana;">+</span>}<span style="font-family:Verdana;"> solar cell, for each wavelength, which is in the range close to the energy band gap of the silicon material. This study provides a tool for improvement solar cell manufacture processes, through the mathematical relationship obtained from the thickness limit according to the absorption coefficient that allows base width optimization.