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摘要:
A thermally tuned multi-channel interference widely tunable semiconductor laser is designed and demonstrated,for the first time to our knowledge,that realizes a tuning range of more than 45 nm,side-mode suppression ratios up to 56 d B,and Lorentzian linewidth below 160 k Hz.Al Ga In As multiple quantum wells(MQWs)were used to reduce linewidth,which have a lower linewidth enhancement factor compared with In Ga As P MQWs.To decrease the power consumption of micro-heaters,air gaps were fabricated below the arm phase sections.For a 75μm long suspended thermal tuning waveguide,about 6.3 m W micro-heater tuning power is needed for a 2πround-trip phase change.Total micro-heater tuning power required is less than 50 m W across the whole tuning range,which is lower than that of the reported thermally tuned tunable semiconductor lasers.
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篇名 Narrow-linewidth thermally tuned multi-channel interference widely tunable semiconductor laser with thermal tuning power below 50 mW
来源期刊 光子学研究:英文版 学科 工学
关键词 tuning TUNABLE POWER
年,卷(期) gzxyjywb_2020,(5) 所属期刊栏目
研究方向 页码范围 671-676
页数 6页 分类号 TN248.4
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光子学研究:英文版
月刊
2327-9125
31-2126/O4
上海市嘉定区清河路390号
出版文献量(篇)
216
总下载数(次)
5
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