A thermally tuned multi-channel interference widely tunable semiconductor laser is designed and demonstrated,for the first time to our knowledge,that realizes a tuning range of more than 45 nm,side-mode suppression ratios up to 56 d B,and Lorentzian linewidth below 160 k Hz.Al Ga In As multiple quantum wells(MQWs)were used to reduce linewidth,which have a lower linewidth enhancement factor compared with In Ga As P MQWs.To decrease the power consumption of micro-heaters,air gaps were fabricated below the arm phase sections.For a 75μm long suspended thermal tuning waveguide,about 6.3 m W micro-heater tuning power is needed for a 2πround-trip phase change.Total micro-heater tuning power required is less than 50 m W across the whole tuning range,which is lower than that of the reported thermally tuned tunable semiconductor lasers.