C-V characteristics of piezotronic metal-insulator-semiconductor transistor

• 来源期刊: 科学通报（英文版）
• 年，卷（期）: 2020,（2）
• 页码范围: 161-168
• 页数: 8页
• 语种: 英文

摘要

Third generation semiconductors for piezotronics and piezo-phototronics,such as ZnO and GaN,have both piezoelectric and semiconducting properties.Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions,contacts and interfaces.The distribution width of piezoelectric charges in a junction is one of important parameters.Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges.Piezotronic metal-insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper,which can serve as guidance for C-V measurements and experimental designs of piezotronic devices,