Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures

• 作者: Cai Zhou Chang-Jun Jiang Fu-Fu Liu Yang-Ping Wang
• 来源期刊: 中国物理B（英文版）
• 关键词: ionic liquid gating planar Hall effect electric field regulation
• 年，卷（期）: 2020,（7）
• 页码范围: 613-618
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab8da9

摘要

We report a tunable transverse magnetoresistance of the planar Hall effect (PHE),up to 48％ in the Ni80Fe20/HfO2 heterostructures.This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage,which exhibits a gate-dependent PHE.Moreover,in the range of 0-V to 1-V gate voltage,transverse magnetoresistance of PHE can be continuously regulated.Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage.This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.