Investigation of positive bias temperature instability for monolayer polycrystalline MoS2 field-effect transistors

• 来源期刊: 中国科学:物理学 力学 天文学（英文版）
• 年，卷（期）: 2020,（1）
• 页码范围: 126-129
• 页数: 4页
• 语种: 英文

摘要

In recent years, molybdenum disulfide (MoS2) has exhibited remarkable electrical, mechanical and optical properties because of its ultrathin body thickness, flexibility and direct bandgap for photo response [1].These excellent properties make MoS2 an excellent material for a range of multifunctional electrical and optical applications.Recently, MoS2 transistors have been demonstrated as an active-matrix backplane circuit to drive a flexible organic light-emitting diode used in a display system [2].Additionally, a one-bit fully MoS2-integrated microprocessor has been successfully developed as a building block in a digital circuit [3].Also,impressive progress has been made in the application of MoS2 as a rectifier to enable flexible antennas for harvesting systems [4].