High performance InAlN/GaN high electron mobility transistors for low voltage applications

• 来源期刊: 中国物理B（英文版）
• 关键词: InAlN/GaN high electron mobility transistor (HEMT) low voltage
• 年，卷（期）: 2020,（5）
• 页码范围: 535-539
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab821e

摘要

A high performance InAlN/GaN high electron mobility transistor (HEMT) at low voltage operation (6-10 V drainvoltage) has been fabricated. An 8 nm InAlN barrier layer is adopted to generate large 2DEG density thus to reduce sheet resistance. Highly scaled lateral dimension (1.2 μm source-drain spacing) is to reduce access resistance. Both low sheet resistance of the InAlN/GaN structure and scaled lateral dimension contribute to an high extrinsic transconductance of 550 mS/mm and a large drain current of 2.3 A/mm with low on-resistance (Ron) of 0.9?·mm. Small signal measurement shows an fT/fmax of 131 GHz/196 GHz. Large signal measurement shows that the InAlN/GaN HEMT can yield 64.7% -52.7% (Vds=6-10 V) power added efficiency (PAE) associated with 1.6-2.4 W/mm output power density at 8 GHz. Theseresults demonstrate that GaN-based HEMTs not only have advantages in the existing high voltage power and high frequency rf field, but also are attractive for low voltage mobile compatible rf applications.