Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels

• 作者: Mei-Na Zhang Shi-Jin Ding Wen-Jun Liu Xiao-Lin Wang Xiaohan Wu Yan Shao
• 来源期刊: 中国物理B（英文版）
• 关键词: perovskite quantum dots a-IGZO thin-film transistor photoresponsive characteristics
• 年，卷（期）: 2020,（7）
• 页码范围: 672-680
• 页数: 9页
• 语种: 英文
• DOI: 10.1088/1674-1056/ab9738

摘要

Photodetectors based on amorphous InGaZnO (a-IGZO) thin film transistor (TFT) and halide perovskites have attracted attention in recent years.However,such a stack assembly of a halide perovskite layer/an a-IGZO channel,even with an organic semiconductor film inserted between them,easily has a very limited photoresponsivity.In this article,we investigate photoresponsive characteristics of TFTs by using CsPbX3 (X =Br or I) quantum dots (QDs) embedded into the a-IGZO channel,and attain a high photoresponsivity over 103A·W-1,an excellent detectivity in the order of 1016 Jones,and a light-to-dark current ratio up to 105 under visible lights.This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel.Moreover,spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps.Thus,this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.