Experimental Characterization of ALD Grown Al<SUB>2</SUB>O<SUB>3</SUB>Film for Microelectronic Applications

• 作者: Yuxi Wang Yida Chen Yong Zhang Zhaoxin Zhu Tao Wu Xufeng Kou Pingping Ding Romain Corcolle Jangyong Kim
• 来源期刊: 材料物理与化学进展(英文)
• 学科: 工学
• 关键词: Dielectrics High-k Thin Film Capacitors Atomic Layer Deposition MICROFABRICATION
• 年，卷（期）: 2021,（1）
• 页码范围: 7-19
• 页数: 13页
• 分类号: TS9

摘要

<span style="white-space:normal;">The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;"> films of MIM capacitors on glass was examined in the voltage range from <span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">&#8722;</span></span></span></span>5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al</span><sub style="white-space:normal;">2</sub><span style="white-space:normal;">O</span><sub style="white-space:normal;">3</sub><span style="white-space:normal;">/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm</span><sup style="white-space:normal;">2</sup><span style="white-space:normal;">at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10</span><sup style="white-space:normal;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;"><span style="white-space:nowrap;">&#8722;</span></span></span></span>8</sup><span