Plasmonic semiconductor nanogroove array enhanced broad spectral band millimetre and terahertz wave detection

• 作者: Jinchao Tong Fei Suo Tianning Zhang Zhiming Huang Junhao Chu Dao Hua Zhang
• 来源期刊: 光：科学与应用（英文版）
• 年，卷（期）: 2021,（4）
• 所属期刊栏目: Articles
• 页码范围: 600-609
• 页数: 10页
• 语种: 英文

摘要

High-performance uncooled millimetre and terahertz wave detectors are required as a building block for a wide range of applications. The state-of-the-art technologies, however, are plagued by low sensitivity, narrow spectral bandwidth, and complicated architecture. Here, we report semiconductor surface plasmon enhanced high-performance broadband millimetre and terahertz wave detectors which are based on nanogroove InSb array epitaxially grown on GaAs substrate for room temperature operation. By making a nanogroove array in the grown InSb layer, strong millimetre and terahertz wave surface plasmon polaritons can be generated at the InSb–air interfaces, which results in significant improvement in detecting performance. A noise equivalent power (NEP) of 2.2 × 10?14 W Hz?1/2 or a detectivity (D*) of 2.7 × 1012 cm Hz1/2 W?1 at 1.75 mm (0.171 THz) is achieved at room temperature. By lowering the temperature to the thermoelectric cooling available 200 K, the corresponding NEP and D*of the nanogroove device can be improved to 3.8 × 10?15 W Hz?1/2 and 1.6 × 1013 cm Hz1/2 W?1, respectively. In addition, such a single device can perform broad spectral band detection from 0.9 mm (0.330 THz) to 9.4 mm (0.032 THz). Fast responses of 3.5 μs and 780 ns are achieved at room temperature and 200 K, respectively. Such high-performance millimetre and terahertz wave photodetectors are useful for wide applications such as high capacity communications, walk-through security, biological diagnosis, spectroscopy, and remote sensing. In addition, the integration of plasmonic semiconductor nanostructures paves a way for realizing high performance and multifunctional long-wavelength optoelectrical devices.