Snapback-free shorted anode LIGBT with controlled anode barrier and resistance

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（2）
• 所属期刊栏目: INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
• 页码范围: 629-635
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abb7fc

摘要

A novel shorted anode lateral-insulated gate bipolar transistor(SA LIGBT)with snapback-free characteristic is pro-posed and investigated.The device features a controlled barrier Vbarrier and resistance RSA in anode,named CBR LIGBT.The electron barrier is formed by the P-float/N-buffer junction,while the anode resistance includes the polysilicon layer and N-float.At forward conduction stage,the Vbarrier andRSAcan be increased by adjusting the doping of the P-float and polysilicon layer,respectively,which can suppress the unipolar mode to eliminate the snapback.At turn-off stage,the low-resistance extraction path(N-buffer/P-float/polysilicon layer/N-float)can quickly extract the electrons in the N-drift,which can effectively accelerate the turn-off speed of the device.The simulation results show that at the same Von of 1.3 V,the Eoff of the CBR LIGBT is reduced by 85％,73％,and 59.6％compared with the SSA LIGBT,conventional LIGBT,and TSA LIGBT,respectively.Additionally,at the same Eoff of 1.5 mJ/cm2,the CBR LIGBT achieves the lowest Von of 1.1 V compared with the other LIGBTs.