Monolithic epitaxy and optoelectronic properties of single-crystallineγ-In2Se3 thin films on mica

• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（1）
• 页码范围: 574-580
• 页数: 7页
• 语种: 英文
• DOI: 10.1088/1674-1056/abcf32

摘要

The growth of γ-In2Se3 thin films on mica by molecular beam epitaxy is studied. Single-crystalline γ-In2Se3 is achieved at a relatively low growth temperature. An ultrathinβ-In2Se3 buffer layer is observed to nucleate and grow through a process of self-organization at initial deposition, which facilitates subsequent monolithic epitaxy of single-crystallineγ-In2Se3 at low temperature. Strong room-temperature photoluminescence and moderate optoelectronic response are ob-served in the achievedγ-In2Se3 thin films.