Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

• 作者: Caroline E.Reilly Stacia Keller Shuji Nakamura Steven P.DenBaars
• 来源期刊: 光：科学与应用（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: Reviews
• 页码范围: 1409-1420
• 页数: 12页
• 语种: 英文

摘要

Using one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This Ⅲ-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by Ⅲ-As and Ⅲ-P technology. As has been the case in these other Ⅲ–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.