Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

• 来源期刊: 材料科学技术（英文版）
• 年，卷（期）: 2021,（1）
• 页码范围: 21-26
• 页数: 6页
• 语种: 英文

摘要

Flexible resistive random access memory (RRAM) has shown great potential in wearable electronics. With tunable multilevel resistance states, flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing system. However, the flexible substrate has intrinsic disadvantages including low-temperature tolerance and poor complementary metal-oxide-semiconductor (CMOS) compatibility, which limit the development of flexible electronics. The physical vapor deposition (PVD) fabrication process could prepare RRAM without requirement of further treat-ment, which greatly simplified preparation steps and reduced the production costs. On the other hand, forming process, as a common pre-programing operation in RRAM, increases the energy consumption and limits the application scenarios of RRAM. Here, a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD technique. The flexible device exhibited reliable resistive switching character-istics under flat state even compressive and tensile states (R=10 mm). The tunable multilevel resistance states (5 levels) could be obtained by controlling the compliance current. Besides, synaptic plasticities also were verified in this device. The flexible NiO-based RRAM shows great potential in wearable forming-free multibit memory and neuromorphic computing electronics.