Mechanism of defect evolution in H+ and He+ implanted InP

• 作者: Ren-Jie Liu Jia-Jie Lin N Daghbouj Jia-Liang Sun Tian-Gui You Peng Gao Nie-Feng Sun Min Liao
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（8）
• 所属期刊栏目: SPECIAL TOPIC—Ion beam modification of materials and applications
• 页码范围: 77-82
• 页数: 6页
• 语种: 英文
• DOI: 10.1088/1674-1056/abf640

摘要

The defect evolution in InP with the 75 keY H+ and 115 keV He+ implantation at room temperature after subsequent annealing has been investigated in detail.With the same ion implantation fluence,the He+ implantation caused much broader damage distribution accompanied by much higher out-of-plane strain with respect to the H+ implanted InP.After annealing,the H+ implanted InP did not show any blistering or exfoliation on the surface even at the high fluence and the H2 molecules were stored in the heterogeneously oriented platelet defects.However,the He molecules were stored into the large bubbles which relaxed toward the free surface,creating blisters at the high fluence.