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摘要:
Indium selenide,a Ⅲ-Ⅴ group semiconductor with layered structure,attracts intense attention in various photoelectric applications,due to its outstanding properties.Here,we report super deformability and thermoelectricity of γ-InSe single crystals grown by modified Bridgeman method.The crystal structure of InSe is studied systematically by transmission electron microscopy methods combined with x-ray diffraction and Raman spectroscopy.The predominate phase of γ-InSe with dense stacking faults and local multiphases is directly demonstrated at atomic scale.The bulk γ-InSe crystals demonstrate surprisingly high intrinsic super deformative ability which is highly pliable with bending strains exceeding 12.5% and 264% extension by rolling.At the meantime,InSe also possesses graphite-like features which is printable,writable,and erasable.Finally,the thermoelectric properties of γ-InSe bulk single crystals are preliminary studied and thermal conductivity can be further reduced via bending-induced defects.These findings will enrich the knowledge of structural and mechanical properties' flexibility of InSe and shed lights on the intrinsic and unique mechanical properties of InSe polytypes.
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篇名 Super deformability and thermoelectricity of bulk γ-InSe single crystals
来源期刊 中国物理B(英文版) 学科
关键词
年,卷(期) 2021,(7) 所属期刊栏目 INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY
研究方向 页码范围 650-658
页数 9页 分类号
字数 语种 英文
DOI 10.1088/1674-1056/abf133
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中国物理B(英文版)
月刊
1674-1056
11-5639/O4
北京市中关村中国科学院物理研究所内
eng
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17050
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27962
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