Review on failure analysis of interconnections in power devices

• 作者: 黄伟 陈志文
• 来源期刊: 中国焊接
• 年，卷（期）: 2022,（1）
• 页码范围: 6-14
• 页数: 9页
• 语种: 英文
• DOI: 10.12073/j.cw.20211227001

摘要

Interconnections in microelectronic packaging are not only the physical carrier to realize the function of electronic circuits, but also the weak spots in reliability tests. Most of failures in power devices are caused by the malfunction of interconnections, including failure of bonding wire as well as cracks of solder layer. In fact, the interconnection failure of power devices is the result of a combination of factors such as electricity, temperature, and force. It is significant to investigate the failure mechanisms of various factors for the failure analysis of interconnections in power devices. This paper reviews the main failure modes of bonding wire and solder layer in the interconnection struc-ture of power devices, and its failure mechanism. Then the reliability test method and failure analysis techniques of interconnection in power device are introduced. These methods are of great significance to the reliability analysis and life prediction of power devices.