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Substitution of lead (Pb) with tin (Sn) is a very important way to reduce the bandgap of metal halide per-ovskite for applications in solar cells,and near infrared (NIR) light-emitting diodes (LEDs),etc.However,mixed Pb/Sn perovskite becomes very disordered with high trap density when the Sn molar ratio is less than 20%.This limits the applications of mixed Pb/Sn perovskites in optoelectronic devices such as wave-length tunable NIR perovskite LEDs (PeLEDs).In this work,we demonstrate that alkali cations doping can release the microstrain and passivate the traps in mixed Pb/Sn perovskites with Sn molar ratios of less than 20%,leading to higher carrier lifetime and photoluminescence quantum yield (PLQY).The external quantum efficiency (EQE) of Sn0.2Pb0.8-based NIR PeLEDs is dramatically enhanced from 0.1% to a record value of 9.6% (emission wavelength:868 nm).This work provides a way of making high quality mixed Pb/Sn optoelectronic devices with small Sn molar ratios.
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篇名 Alkalis-doping of mixed tin-lead perovskites for efficient near-infrared light-emitting diodes
来源期刊 科学通报(英文版) 学科
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年,卷(期) 2022,(1) 所属期刊栏目 Physical Sciences
研究方向 页码范围 54-60
页数 7页 分类号
字数 语种 英文
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科学通报(英文版)
半月刊
1001-6538
11-1785/N
大16开
北京东黄城根北街16号
2-177
1950
eng
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