Realization of warm white light emitting in single phase Gd(PxV1-x)O4∶y at％Sm3+,1 at％Bi3+phosphor

• 作者: Chao Dou Yanzhen Yin Fei Zheng Zhen Wang Shijia Sun Chen Hu Yang Che Bing Teng Degao Zhong
• 来源期刊: 稀土学报（英文版）
• 年，卷（期）: 2022,（4）
• 所属期刊栏目: SPECTROSCOPY,LUMINESCENCE AND PHOSPHORS
• 页码范围: 559-566
• 页数: 8页
• 语种: 英文

摘要

A series of single phase,warm white light emitting phosphors,Gd(PxV1-x)O4∶y at％Sm3+,with 1 at％Bi3+doping concentration were synthesized by high temperature solid state method in this work.The experimental results indicate broadband cyan emission of Bi3+and characteristic orange-red emission of Sm3+can be effectively tuned by changing the ratios of PO43-/VO43-in Gd(PxV1-x)O4∶1 at％Sm3+,1 at％Bi3+,and the energy transfer process among VO43-,Sm3+,Bi3+also can be adjusted.Based on this,warm white light emitting can be realized by further optimizing the doping concentration of Sm3+in the phosphors.At 423 K,the PL intensity of Gd(P0.7V0.3)O4∶2 at％Sm3+,1 at％Bi3+remains 84.3％of the initial value at 293 K,while the measured quantum efficiency is 67.8％.EL spectrum analysis results of the fabricated white light emitting diode(wLED)based on a 310 nm UV-chip and Gd(P0.7V0.3)O4∶2 at％Sm3+,1 at％Bi3+phosphors imply low correlated color temperature(3132 K)and appropriate color-rending index(Ra=82.7).These results demonstrate that Gd(P0.7V0.3)O4∶2 at％Sm3+,1 at％Bi3+is a good candidate for manufacturing UV-activated warm white light emitting diodes.