Synthesis of Thick Diamond Films by Direct Current Hot-Cathode Plasma Chemical Vapour Deposition

• 来源期刊: 中国物理快报（英文版）
• 学科: 物理学
• 年，卷（期）: 2002,（9）
• 页码范围: 1374-1376
• 页数: 3页
• 分类号: O4
• 语种: 英文

摘要

The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100℃ to 1500℃ and nonsymmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50mm and thickness of 0. 5-4.2mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10μm/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K. cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules.The performance can be obviously improved.