New Analysis to Measure the Capacitance and Conductance of MOS Structure toward Small Size of VLSI Circuits

• 作者: Wagah Farman Mohammad
• 来源期刊: 电路与系统(英文)
• 学科: 医学
• 关键词: Thin Film R-Y-NR NETWORK MOS R-Y-NR NETWORK MOS-VLSI Circuits MOS CAPACITANCE
• 年，卷（期）: 2011,（3）
• 页码范围: 145-150
• 页数: 6页
• 分类号: R73

摘要

In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four – terminal R-Y-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to measure the shunt capacitance and the shunt conductance of certain MOS samples. Mat lab program has been used to compute shunt capacitance and shunt conductance at different frequencies. The results computed by this method have been compared with the results obtained by LCR meter method and showed perfect coincident with each other.