Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots

• 作者: Fabio De Matteis Fariba Hatami Ivan Colantoni Liliana D’Amico Mauro Casalboni Paolo Prosposito Roberta De Angelis William T. Masselink
• 来源期刊: 传感技术(英文)
• 学科: 化学
• 关键词: VAPOUR Sensitivity Quantum DOT Photoluminescence INP Organic Solvent
• 年，卷（期）: cgjsyw_2013,（1）
• 页码范围: 1-5
• 页数: 5页
• 分类号: O6

摘要

Surface InP quantum dots grown by gas source molecular beam epitaxy on In0.48Ga0.52P buffer layer lattice matched to GaAs substrate shows a broad-band near-infrared photoluminescence ranging from 750 to 865 nm dependent on their dimensions. A reversible luminescence intensity enhancement has been observed when the quantum dots were exposed to vapours of different chemical solvents with the highest sensitivity for alcohol (methanol and ethanol) vapours. The luminescent behaviour is dependent on the solvent type and concentration. The peak energy and band shape of the luminescence are not affected by the solvent vapour.