Intervalley Scattering of Electrons in n-Si at T = 77 ÷450 K

• 作者: Baja Orasgulyev Leonid Panasyuk Valerii Ermakov Volodymyr Kolomoets
• 来源期刊: 凝固态物理国际期刊(英文)
• 学科: 医学
• 关键词: SILICON f-Transitions g-Transitions Tensoresistivity Effect UNIAXIAL STRAIN
• 年，卷（期）: 2013,（1）
• 页码范围: 43-45
• 页数: 3页
• 分类号: R73

摘要

The change in electron mobility of n-Si with increasing the temperature which may be due to the inclusion of gLOphonon energy of 720 K, is presented. Under orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The f-transitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 77 to 450 K. So, no appreciable contribution of g-transitions to intervalley scattering occurs, while the observed is the decisive role of f-transitions to intervalley scattering. The results of measuring of the tensoresistivity effect for n-Si crystals under X//[001]//J are presented at these temperatures too.