ZnO Heteroepitaxy on Sapphire Using a Novel Buffer Layer of Titanium Oxide: Optoelectronic Behavior

• 作者: Satoshi Yamauchi Yoh Imai
• 来源期刊: 晶体结构理论与应用(英文)
• 学科: 医学
• 关键词: ZNO Ti2O3 Plasma-Assisted EPITAXY Photoluminescence Free-Exciton Bound-Exciton
• 年，卷（期）: 2013,（3）
• 页码范围: 100-105
• 页数: 6页
• 分类号: R73

摘要

Optoelectronic property of ZnO epitaxial layer grown by plasma-assisted epitaxy at temperature as low as 340°C using Ti2O3 buffer layer on a-sapphire were studied by low temperature photoluminescence at 10 K comparing to the layers on c-sapphire and a-sapphire without the buffer layer. The near band-edge emission consisting of free-exciton emissions and neutral-donor bound exciton emissions was significantly dependent on the buffer thickness and dominated by the free-exciton emissions in the layer grown on the very thin buffer layer about 0.8 nm, whereas the intense emissions by neutral-donor bound excitons were observed in the ZnO layer on c-sapphire. The structural behavior indicated the donor was originated from the three-dimensional growth of ZnO layer and details of the optoelectronic feature suggested the residual donors were Al and interstitial-Zn.