Identification of Grown-In Defects in CZ Silicon after Cu Decoration

• 作者: Che-Yu Lin Chien-Cheng Lin Chien-Chia Tseng Kun-Lin Lin Yi-Ling Jian Yih-Rong Luo
• 来源期刊: 显微镜研究(英文)
• 学科: 医学
• 关键词: CZ Silicon CU DECORATION MICROSTRUCTURES DEFECTS Transmission Electron Mi-croscopy
• 年，卷（期）: 2017,（2）
• 页码范围: 11-19
• 页数: 9页
• 分类号: R73

摘要

Bulk Czochralski silicon crystals were decorated with Cu and characterized by transmission electron microscopy (TEM) with energy-dispersive spectroscopy (EDS), atomic force microscopy (AFM), optical microscopy (OM), scanning electron microscopy (SEM), and photoluminescence spectroscopy (PL). The vacancy-type core, oxidation-induced stacking faults (OISF) ring, nearly defect-free ring, and self-interstitial-type rich outer ring were delineated in the Si crystal wafer. At the surface of the Si crystal, vertical-horizontal line (V-H line) defects and windmill defects (W-defects) were formed instead of OISF. The families of growth planes and directions were expressed as {011} and for the V-H line and {010} and for W-defects, respectively. In addition to V-H line defects and W-defects, pits or voids and Si oxide with dissolved Cu were found in the Si crystal wafer.