STEM MoiréObservation of Lattice-Relaxed Germanium Grown on Silicon

• 作者: Chiaya Yamamoto Hiroki Nakaie Junji Yamanaka Keisuke Arimoto Kiyokazu Nakagawa Kosuke O. Hara Tetsuji Arai
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 医学
• 关键词: STEM Moiré LATTICE STRAIN Ge on Si Plasma HEATING
• 年，卷（期）: clkxyhxgcyw_2017,（1）
• 页码范围: 102-108
• 页数: 7页
• 分类号: R73

摘要

We deposited Ge films on Si substrates by molecular beam epitaxy (MBE) method. The specimens were annealed at around 750 C using microwave- plasma heating technique which we had reported before. After these pro- cesses, we carried out special scanning transmission electron microscopic (STEM) observation. The moiré between the crystal lattices and the scanning lines controlled by STEM was utilized to show lattice-spacing distribution. The results exhibited that we were succeeded in forming lattice-relaxed Ge thin films. It was also recognized that this STEM moiré technique is very useful to observe lattice-spacing distribution for large area with high resolution.