Investigation of Illumination Effects on the Electrical Properties of Au/GO/p-lnP Heterojunction with a Graphene Oxide Interlayer

• 作者: Dasaradha Rao Lambada Fei Wang Peirui Ji Shareen Shafique Shuming Yang Yiming Wang
• 来源期刊: 纳米制造与计量(英文)
• 学科: 工学
• 关键词: Electrical propertics Heterojunction diode Graphene oxide I-V and C-V techniques Interface state density Ideality factor
• 年，卷（期）: 2020,（4）
• 页码范围: 269-281
• 页数: 13页
• 分类号: TN3

摘要

In this work,the electrical property of Au/graphene oxide/p-InP hetero-structure has been evaluated by 1-V and C-V measure-ments in dark and iluminated conditions(visible light).The diode exhibited significant rectifying behavior,thus indicating the heterojunction-lype diode.The key electrical parameters of heterojunction diode including ideality factor(n),series resistance(R),shunt resistance(Rsh),and barrier height(Фb)are estimated from I-V data based on the theory of thermionic emission.The modifed Norde and Cheung's methods were utilized to evaluate the electrical parameters and compared the results.The current conduction mechanism at different voltage regions of I-V has also been investigated.The variation of 1/C versus voltage signifies linearity at high frequency(1 MHz),indicating that the type of heterojunction can be abrupt.The experimental outcomes of this study revealed that the performance of heterojunction diode in dark is considerably good as compared to the ilumination condition with respect to the lower values of Фp,n,R,and interface state density(Nss).