Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

• 作者: Chaoqi Dai Peiqin Chen Shaocheng Qi Yongbin Hu Zhitang Song Mingzhi Dai
• 来源期刊: 纳米研究（英文版）
• 年，卷（期）: 2021,（1）
• 所属期刊栏目: Research Articles
• 页码范围: 232-238
• 页数: 7页
• 语种: 英文

摘要

There is a continuous demand to reduce the size of the devices that form a unit circuit,such as logic gates and memory,to reduce their footprint and increase device integration.In order to achieve a highly efficient circuit architecture,optimizations need to be made in terms of device processing.However,the time involved in the current reduction of device sizes according to Moore's Law has slowed down.Here,we propose a flexible transistor with ultra-thin IGZO(InGaZnO,indium-gallium-zinc-oxide)as the channel material,which not only scales down the footprints of multi-transistor logic gates but also combines the functions of the logic gates,memory,and sensors into a single cell.The transistor proposed here has an ultrathin semiconductor layer and can implement the typical functions of logic gates that conventionally have 2-6 transistors.Furthermore,it demonstrates the memory effect with a programming time as low as 5 ns.This design can also display various artificial synaptic behaviors.This new device design and structure can be adopted for the development of next-generation flexible electronics that require higher integration.