The two-dimensional (2D) structure of layered transition metal dichalcogenides (TMDs) provides unusual physical properties [1,2] and chemical reactivity [3,4], which can be influenced by defects such as dislocations [5,6].For example, dislocations can act as nucleation sites for the onset of deformation when subjected to stress [7].Defects and associated strain can lead to spin and magnetism in 2D layered structures that may be important for extending 2D crystal's electronic applications into spin-based technology [8,9].Therefore, "defect engineering" can be used to further design and optimize properties owing to the appreciable influence of defects on material properties [10,11].The roles of defects in the ionic migration process are critical for the performance of ionic doping and migration based devices but remain largely underexplored.