High performance infrared detectors compatible with CMOS-circuit process

• 作者: Chao Wang Ning Li Ning Dai Wang-Zhou Shi Gu-Jin Hu He Zhu
• 来源期刊: 中国物理B（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: GENERAL
• 页码范围: 329-333
• 页数: 5页
• 语种: 英文
• DOI: 10.1088/1674-1056/abd6fb

摘要

A type of Si-based blocked impurity band photoelectric detector with a planar architecture is designed and demon-strated by a modified silicon semiconductor processing technique.In this route,multiple ion implantation is utilized to ensure the uniform distribution of the P elements in silicon,and rapid thermal annealing treatment is used to activate the P atoms and reduce damages caused by ion-implantation.The fabricated prototype device exhibits an excellent photoelectric response performance.With a direct current (DC) bias voltage of-2.3 V,the device detectivity to blackbody irradiation is as high as 5 × 1013cm·Hz1/2/W,which corresponds to a device responsivity of nearly 4.6 A/W,showing their potential applications in infrared detection,infrared astrophysics,and extraterrestrial life science.In particular,the developed device preparation process is compatible with that for the CMOS-circuit,which greatly reduces the manufacturing cost.