Interface engineering of p-n heterojunction for kesterite photovoltaics:A progress review

• 作者: Mingrui He Kaiwen Sun Mahesh P.Suryawanshi Jianjun Li Xiaojing Hao
• 来源期刊: 能源化学
• 年，卷（期）: 2021,（9）
• 页码范围: 1-8
• 页数: 8页
• 语种: 英文

摘要

Kesterite Cu2ZnSn(S,Se)4(CZTSSe)is considered one of the most promising thin-film photovoltaic(PV)technologies due to its bandgap tunability(1.0～1.5 eV)and high absorption coefficient(＞104 cm-1).However,the highest power conversion efficiency(PCE)of CZTSSe has so far only reached up to 12.6％,much lower than the theoretical limit defined by the Shockley-Queisser(SQ)theory.The large open-circuit voltage(Voc)deficit and inferior fill factor(FF)are prevalent in kesterite PV and hamper the improvement in efficiency.In this review,unfavourable energy band alignment at the CZTSSe/buffer junction,as well as defective interface are identified as two obstacles at the p-n heterojunction.These issues contribute to the interface induced recombination,thus significantly reducing efficiency.Subsequently,we review recent advances in strategies to improve the efficiency by altering the charac-teristics of the interface,covering alternative buffer layers,heterojunction treatments and passivation layers.Finally,future research directions of heterojunction engineering are proposed as schemes towards the ideal interface in kesterite solar cells.