Excitation Transfer in Vertically Self-Organized Pairs of Unequal-Sized InAs/GaAs Quantum Dots

• 来源期刊: 中国物理快报(英文版)
• 年，卷（期）: 2000,（8）
• 所属期刊栏目: Condensed matter: electronic structure,
• 页码范围: 615-616
• 页数: 2页
• 语种: 英文

摘要

The excitation transfer processes in vertically self-organized pairs of unequal-sized quantum dots (QD's), which are created in InAs/GaAs bilayers with different InAs deposition amounts in the first and second layers, have been investigated experimentally by photoluminescence technique. The distance between the two dot layers is varied from 3 to 12nm. The optical properties of the formed pairs of unequal-sized QD's with clearly discernible ground-state transition energy depend on the spacer thickness. When the spacer layer of GaAs is thin enough, only one photoluminescence peak related to the large QD ensemble has been observed as a result of strong electronic coupling in the InAs QD pairs. The results provide evidence for nonresonant energy transfer from the smaller QDs in the second layer to the larger QD's in the first layer in such an asymmetric QD pair.