Electrical Characteristics of InGaN/AlGaN and InGaN/GaN MQW Near UV-LEDs

• 来源期刊: 中国物理快报（英文版）
• 年，卷（期）: 2007,（11）
• 页码范围: 3245-3248
• 页数: 4页
• 语种: 英文

摘要

Electrical characteristics of Ino.05Gao.95N/AJo.07Gao.93N and Ino.05Gao.95N/GaN multiple quantum well (MQW) ultraviolet light-emitting diodes (UV-LEDs) at 400 nm wavelength are measured. It is found that for In-GaN/AlGaN MQW LEDs, both ideality factor and parallel resistance are similar to those of InGaN/GaN MQW LEDs, while series resistance is two times larger. It is suggested that the AJ0.07Ga0.93N barrier layer did not change crystal quality and electrical characteristic ofp-n junction either, but brought larger series resistance. As a result, InGaN/AlGaN MQW LEDs suffer more serious thermal dissipation problem although they show higher light output efficiency.