Capacitive Model and S-Parameters of Double-Pole Four-Throw Double-Gate RF CMOS Switch

• 作者: Ghanashyam Singh Kalyan S. Yadav Viranjay M. Srivastava
• 来源期刊: 无线工程与技术(英文)
• 学科: 工学
• 关键词: Capacitive MODEL DOUBLE-GATE MOSFET DP4T SWITCH Isolation Radio Frequency RF SWITCH S-PARAMETER and VLSI
• 年，卷（期）: wxgcyjsyw_2011,（1）
• 页码范围: 15-22
• 页数: 8页
• 分类号: TN3

摘要

In this paper, we have analyzed the Double-Pole Four-Throw Double-Gate Radio-Frequency Complementary Metal-Oxide-Semiconductor (DP4T DG RF CMOS) switch using S-parameters for 1 GHz to 60 GHz of frequency range. DP4T DG RF CMOS switch for operation at high frequency is also analyzed with its capacitive model. The re-sults for the development of this proposed switch include the basics of the circuit elements in terms of capacitance, re-sistance, impedance, admittance, series equivalent and parallel equivalent of this network at different frequencies which are present in this switch whatever they are ON or OFF.