Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)

• 作者: Gajanan Niranjan Chaudhari Shikant Sahebrao Patil Sunil Madhavrao Chore Vijay Ramkrishna Chinchamalatpure
• 来源期刊: 现代物理(英文)
• 学科: 化学
• 关键词: SOL-GEL Technique ZRO2 THIN Film C –V I-V
• 年，卷（期）: 2012,（1）
• 页码范围: 69-73
• 页数: 5页
• 分类号: O6

摘要

The ZrO2 thin films deposited on Si (100) were successfully synthesized by solgel process and deposited by using spin-coating technique.The structural properties of ZrO2 thin films were investigated by X-Ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and electrical properties were studied by conventional techniques like Capacitance-Voltage (C-V) measurement and Current–Voltage (I–V) measurement. The XRD of ZrO2 films shows the films crystallized and exists in two phases at 700℃ calcinations temperature. The C–V characteristics of all the dielectric films that involved distinct inversion, depletion, and accumulation were clearly revealed in MIS structure. I-V characteristics of ZrO2 thin films on Si shows decreased saturation current on calcinations temperatures. The XPS measurement reveals that a zirconium silicate interfacial layer has formed in the ZrO2/Si Systems.