Resistive Switching in Stabilized Zirconia Films Studied by Conductive Atomic Force Microscopy

• 作者: Alexander Kasatkin Dmitry Antonov Dmitry Filatov Ivan Antonov Oleg Gorshkov
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 物理学
• 关键词: Resistive Switching YTTRIA Stabilized ZIRCONIA CONDUCTIVE ATOMIC Force MICROSCOPY
• 年，卷（期）: 2017,（1）
• 页码范围: 8-14
• 页数: 7页
• 分类号: O4

摘要

We have applied Conductive Atomic Force Microscopy (CAFM) to study the microscopic mechanism of resistive switching in the ultrathin (3 - 5 nm) yttria stabilized zirconia (YSZ) films. Using CAFM, we were able to trace the growth of the individual conductive filaments, which are considered now to be responsible for the resistive switching effect in the transition metal oxides. The growth of the filaments has been proven to be initiated by the defects in the film material including the ones, which are the concentrators of the electric field, in particular, by the roughness (hillocks) of the film/substrate interface. The electron transport via individual filaments has been studied. Besides the butterfly-type hysteresis in the current-voltage (I-V) curves of the probe- to-sample contact typical for the bipolar resistive switching, we have observed the I-V curves with resonant peaks attributed to the resonant electron tunneling via the localized electron states in the filaments.