Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers

• 作者: Chiaya Yamamoto Hiroki Nakaie Junji Yamanaka Keisuke Arimoto Kiyokazu Nakagawa Tetsuji Arai Toshiyuki Takamatsu
• 来源期刊: 材料科学与化学工程(英文)
• 学科: 工学
• 关键词: MICROWAVE Plasma Heating HIGH HOLE MOBILITY Ge on Si
• 年，卷（期）: clkxyhxgcyw_2017,（1）
• 页码范围: 42-47
• 页数: 6页
• 分类号: TN3

摘要

We have developed a microwave plasma heating technique to rapidly heat the transition metal. W/SiO2 layers were deposited on Ge/Si heterostructures. By heating the W, dislocations in Ge layers originated from lattice mismatch between Ge and Si crystals were reduced drastically. We have fabricated p- MOSFETs on Ge/Si substrates and realized higher mobility of about 380 cm2/ Vs than that of Si p-MOSFET.