Improved Efficiency of ZnO and Ge Purification

• 作者: Alexandr F. Singaеvsky Grygoriy S. Pekar Ilya A. Vasin Myhailo M. Lokshin Oleksandr V. Dubikovskyi
• 来源期刊: 结晶过程及技术期刊(英文)
• 学科: 工学
• 关键词: PURIFICATION GERMANIUM Zinc Oxide
• 年，卷（期）: 2019,（3）
• 页码范围: 39-47
• 页数: 9页
• 分类号: TG1

摘要

Unconventional ways to improve the efficiency of purification of two different semiconductor materials of current interest, ZnO and Ge, are described. It is shown that, by using chemically assisted vapour transport of ZnO with carbon as a transporting agent, the degree of chemical purity of ZnO can be increased by more than an order of magnitude. It is also found that heating of the molten Ge in the experimentally determined narrow (about 20<span style="white-space:nowrap;">?</span><span>C wide) temperature range in which an intense evaporation of certain substances is observed, leads to a significant reduction of germanium contamination. As a result, a subsequent deep purification of pre-heat treated germanium by zone refining can be achieved at twice reduced (as compared with “non-treated” Ge) number of passes of a boat with germanium through the melting zones. </span><span>Thus, the Ge purification process becomes faster, cheaper and more efficient.</span>