Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device

• 作者: Tukaram D.Dongale Atul C.Khot Ashkan V.Takaloo Kyung Rock Son Tae Geun Kim
• 来源期刊: 材料科学技术（英文版）
• 年，卷（期）: 2021,（19）
• 页码范围: 81-91
• 页数: 11页
• 语种: 英文

摘要

Multilevel resistive switching(RS)is a key property to embrace the full potential of memristive devices for non-volatile memory and neuromorphic computing applications.In this study,we employed nanopar-ticulated cobaltite oxide(Co3O4)as a model material to demonstrate the multilevel RS and synaptic learning capabilities because of its multiple and stable redox state properties.The Pt/Co3O4/Pt memris-tive device exhibited tunable RS properties with respect to different voltages and compliance currents(CC)without the electroforming process.That is,the device showed voltage-dependent RS at a higher CC whereas CC-dependent RS was observed at lower CC.The device showed four different resistance states during endurance and retention measurements and non-volatile memory results indicated that the CC-based measurement had less variation.Besides,we investigated the basic and complex synap-tic plasticity properties using the analog current-voltage characteristics of the Pt/Co3O4/Pt device.In particular,we mimicked the potentiation-depression and four-spike time-dependent plasticity(STDP)rules such as asymmetric Hebbian,asymmetric anti-Hebbian,symmetric Hebbian,and symmetric anti-Hebbian learning rules.The results of the present work indicate that the cobaltite oxide is an excellent nanomaterial for both multilevel RS and neuromorphic computing applications.