EFFECTS OF SUBSTRATE TEMPERATURE ON THE PROPERTIES OF MO-DOPED ZNO FILMS PREPARED BY RF MAGNETRON SPUTTERING

• 来源期刊: 材料科学技术(英文版)
• 学科: 工学
• 年，卷（期）: 2009,（6）
• 页码范围: 785-788
• 页数: 4页
• 分类号: TG174.44
• 语种: 中文

摘要

Transparent conducting molybdenum-doped zinc oxide (MZO) films were successfully prepared by radio frequency (RF) magnetron sputtering method on glass substrates under different substrate temperatures. The nature of MZO film is polycrystalline with hexagonal structure and a preferred orientation along c-axis. With increasing substrate temperature from room temperature to 400°C, the crystallinity of the films is deteriorated and the resistivity increases sharply due to both the decrease of carrier concentration and Hall mobility. The lowest resistivity achieved is 9.2*10-4Ω· cm with a high Hall mobility of 30 cm2·V-1·s-1 for the film deposited at room temperature. The average transmittance in the visible range exceeds 85% for all the samples. The optical band gap decreases from 3.30 to 3.25 eV with substrate temperature from room temperature to 400°C.