FDTD Simulation of Three Photon Absorption and Realization of NAND Gate with GaAs Wire Waveguide

• 作者: Anirban Roy Chowdhury Dharmadas Kumbhakar Ivy Dutta
• 来源期刊: 光学与光子学期刊(英文)
• 学科: 数学
• 关键词: Three PHOTON ABSORPTION FIFTH Order NONLINEARITY FDTD Full Vector Finite Difference Method Pump BEAM and Probe BEAM
• 年，卷（期）: 2013,（5）
• 页码范围: 311-317
• 页数: 7页
• 分类号: O1

摘要

GaAs has high three photon absorption (3PA) co-efficient at mid-infrared wavelength like2.2mm and waveguides can be formed with this material like silicon nano-wires. It is shown that three-photon-absorption in GaAs wire waveguide can be utilized to form NAND gate. Three-photon-absorption is incorporated in one-dimensional Finite Difference Time Domain (FDTD) equations. The evolution of a probe pulse under the influence of a pump pulse through crossabsorption in a waveguide is investigated using FDTD simulation, where the dominant process is nonlinear three-photon-absorption. Output probe power dependence on input pump power shows that GaAs waveguide NAND gate has higher extinction ratio in comparison to NAND gate using two-photon-absorption in silicon waveguide.