Negative Resistance Region 10 nm Gate Length on FINFET

• 作者: Daruosh Masti Maryam Nezafat Omid Zeynali
• 来源期刊: 现代物理(英文)
• 学科: 工学
• 关键词: Multi-Gate MOSFET (Metal-Oxide-Semiconductor FIELD-EFFECT Transistor) FINFET Silicon on INSULATOR Negative Resistance
• 年，卷（期）: 2014,（12）
• 页码范围: 1117-1123
• 页数: 7页
• 分类号: TN3

摘要

In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.