High-performance mid-wavelength InAs avalanche photodiode using AlAs0.13Sb0.87as the multiplication layer

• 作者: BIYING NIE CHENGCHENG ZHAO DIANA L.HUFFAKER DOMINIC C.M.KWAN JIANLIANG HUANG SHIYU XIE WENQUAN MA XIAO MENG YANHUA ZHANG
• 来源期刊: 光子学研究:英文版
• 学科: 工学
• 关键词: AVALANCHE material. performance
• 年，卷（期）: 2020,（5）
• 页码范围: 755-759
• 页数: 5页
• 分类号: TN364.2

摘要

We report on a high-performance mid-wavelength infrared avalanche photodetector(APD)with separate absorption and multiplication regions.InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material.At room temperature,the APD’s peak response wavelength is 3.27μm,and the 50%cutoff wavelength is 3.5μm.The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27μm when the applied reverse bias voltage is 14.6 V.The measured peak detectivity D*of the device is 2.05×10^9 cm·Hz^0.5/W at 3.27μm.