Photoluminescence study of the In0.3Ga0.7As surface quantum dots coupling structure

• 作者: YANG Ying-li LIU Zeng-guang WANG Guo-dong WANG Ying YUAN Qing FU Guang-sheng
• 来源期刊: 光电子快报（英文版）
• 年，卷（期）: 2021,（5）
• 所属期刊栏目: Materials
• 页码范围: 302-307
• 页数: 6页
• 语种: 英文
• DOI: 10.1007/s11801-021-0108-4

摘要

Photoluminescence (PL) was investigated as functions of the excitation intensity and temperature for a coupling sur-face quantum dots (SQDs) structure which consists of one In0.3Ga0.7As SQDs layer being stacked on multi-layers of In0.3Ga0.7As buried quantum dots (BQDs).Accompanied by considering the localized excitons effect induced by inter-face fluctuation,carrier transition between BQDs and SQDs were analyzed carefully.The PL measurements confirm that there is a strong carrier transition from BQDs to SQDs and this transition leads to obvious different PL character-istics between BQDs and SQDs.These results are useful for future application of SQDs as surface sensitive sensors.